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1 polysilicon gate
затвор з полікристалічного кремнію, полікремнієвий затворEnglish-Ukrainian dictionary of microelectronics > polysilicon gate
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2 polysilicon-gate CCD
ПЗЗ з полікремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > polysilicon-gate CCD
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3 polysilicon-gate process
технологія МОН ІС з полікремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > polysilicon-gate process
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4 polysilicon-gate technolog/y
технологія МОН ІС з полікремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > polysilicon-gate technolog/y
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5 doped polysilicon gate
затвор з легованого полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > doped polysilicon gate
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6 double-layer polysilicon gate (MOS) process
технологія МОН ІС з дворівневими полікремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > double-layer polysilicon gate (MOS) process
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7 double-layer polysilicon gate (MOS) process
технологія МОН ІС з дворівневими полікремнієвими затворамиEnglish-Ukrainian dictionary of microelectronics > double-layer polysilicon gate (MOS) process
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8 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
9 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
10 technolog/y
1) технологія (див. т-ж арproach, technique) 2) техніки - advanced technolog/y
- alignment technolog/y
- analog technolog/y
- baseline technolog/y
- basic technolog/y
- batch technolog/y
- beam-tape technolog/y
- bi-FET technolog/y
- bi-MOS technolog/y
- BIMOS technolog/y
- bipolar technolog/y
- bit-slice technolog/y
- beardless technolog/y
- BSA technolog/y
- bubble technolog/y
- bumping technolog/y
- CAD technolog/yies
- CCD technolog/y
- cell array technolog/y
- cermet technolog/y
- CMOS technolog/y
- coating technolog/y
- cryogenic technolog/y
- current technolog/y
- custom-design technolog/y
- deep-ultraviolet photolithographic technolog/y
- dense LSI technolog/y
- diffused epitaxial planar technolog/y
- diffusion technolog/y
- digital technolog/y
- dominant technolog/y
- dry technolog/y
- dry chemical etching technolog/y
- ECL technolog/y
- electron technolog/y
- electron-beam exposure technolog/y
- electron-parts technolog/y
- electro-optical technolog/y
- epibase technolog/y
- epiplanar technolog/y
- epitaxial planar technolog/y
- film-carrier technolog/y
- fine-line technolog/y
- flip-chip bonding technolog/y
- flip-chip technolog/y
- full-slice technolog/y
- fuse-link technolog/y
- fusible-link technolog/y
- gallium arsenide technolog/y
- gate-array technolog/y
- high technolog/y
- high-density technolog/y
- high-electron mobility transistor technolog/y
- “high-end” technolog/y
- high-speed technolog/y
- hybrid technolog/y
- industry-standard MOS technolog/y
- information technolog/y
- inner-lead bonding technolog/y
- integration technolog/y
- interconnection technolog/y
- isoplanar technolog/y
- J-FET technolog/y
- Josephson-junctiontechnolog/y
- Josephsontechnolog/y
- leading-edge technolog/y
- lithographic technolog/y
- logic technolog/y
- low technolog/y
- “low-end” technolog/y
- low-power technolog/y
- magnetic-bubble technolog/y
- mainstream technolog/y
- mask-fabrication technolog/y
- master-slice technolog/y
- merged bipolar technolog/y
- merged technolog/y
- metal-board technolog/y
- metallization technolog/y
- microcircuit technolog/y
- microelectronic technolog/y
- microsystems technolog/y MST
- microsystems technolog/y
- MIS technolog/y
- mixed technolog/y
- monolithic technolog/y
- MOS technolog/y
- MTL technolog/y
- multilayer-wiring technolog/y
- multiple-epitaxial planar technolog/y
- n-channel technolog/y
- optical lithographic technolog/y
- oxide-isolated monolithic technolog/y
- passivation technolog/y
- p-channel technolog/y
- p-channel Si-gate technolog/y
- photofabrication technolog/y
- planar fabrication technolog/y
- planar technolog/y
- plasma technolog/y
- plating technolog/y
- polysilicon-gate technolog/y
- polysilicon-load technolog/y
- polysilicon self-aligned PSA technolog/y
- polysilicon self-aligned technolog/y
- resistless etching technolog/y
- robotic technolog/y
- scaled process technolog/y
- scaled technolog/y
- Schottky transistor logic technolog/y
- Schottky TTL technolog/y
- screen-and-fire technolog/y
- self-aligned source-drain diffusion technolog/y
- shared silicon technolog/y
- silicide-gate technolog/y
- silicon technolog/y
- silicon-gate technolog/y
- silicon-in-insulator technolog/y
- silicon-in-sapphire technolog/y
- silicon-on-insulator technolog/y
- silicon-on-sapphire technolog/y
- silicon wafer technolog/y
- single-diffused planar technolog/y
- single-diffused technolog/y
- solid-state technolog/y
- spider-bonding technolog/y
- standard bipolar technolog/y
- submicron IC technolog/y
- submicron technolog/y
- subnanosecond technolog/y
- substrate technolog/y
- subtractive technolog/y
- superconducting technolog/y
- surface-mount technolog/y
- system technolog/y
- TAB technolog/y
- tape-automated-bonding technolog/y
- tape bumping technolog/y
- thick-film multilayer technolog/y
- thick-film hybrid technolog/y
- thin-film technolog/y
- trench technolog/y
- trench isolation technolog/y
- TTL technolog/y
- ULA technolog/y
- ultraviolet photolithography technolog/y
- unipolar technolog/y
- V-groove technolog/y
- VHSIC technolog/y
- wafer bumping technolog/y
- water treatment technolog/y
- wiring technolog/y
- X-ray technolog/yEnglish-Ukrainian dictionary of microelectronics > technolog/y
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11 CCD
прилад із зарядовим зв’язком, ПЗЗ - bulk-channel CCD
- buried-channel CCD
- deep-depletion CCD
- junction CCD
- overlapping-gate CCD
- parallel-transfer CCD
- peristaltic CCD
- polysilicon-gate CCD
- recirculatlng CCD
- self-aligned CCD
- short-gate CCD
- staggered-охide CCD
- stepped-охide CCD
- surface-channel CCD
- two-phase CCD -
12 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
13 structure
1. ім. структура; конструкція 2. дієсл. формувати структуру - array structure
- band structure
- basic structure
- bilevel structure
- bipolar structure
- bridge structure
- charge-coupled device structure
- charge-coupled structure
- charge-transfer device structure
- charge-transfer structure
- chip structure
- CMOS structure
- contiguous-disk propagating structure
- data structure
- delta-type doping structure
- disordered structure
- double-barrier parabolic well structure
- double-implanted structure
- functional structure
- gate structure
- graded structure
- heterogeneous structure
- heterojunction structure
- homogeneous structure
- implanted structure
- insulated substrate structure
- integrated circuit structure
- integrated structure
- interconnection structure
- interdigital collector structure
- interface structure
- isolation-moat structure
- Josephson-effect structure
- junction-isolated structure
- latchup resistant structure
- lateral structure
- lateral transistor structure
- lattice structure
- lattice-strained structure
- lead structure
- logic structure
- MAS structure
- mask structure
- merged structure
- mesa -type structure
- mesa structure
- MIM structure
- MIS structure
- MNOS structure
- monolithic-typestructure
- monolithicstructure
- MOS structure
- MSM structure
- MTOS structure
- multigate structure
- multilayer structure
- multilevel structure
- nonhomogeneous-base structure
- n-p-n structure
- nonresonant surface реriodical structure
- oxide-isolated structure
- pin structure
- planar structure
- planar superlattice structure
- p-n-p structure
- polycrystalline resistor structure
- propagating structure
- quantum-box structure
- quantum well structure
- quasi-one dimensional structure
- recessed structure
- regular crystal structure
- self-aligned gate structure
- self-registered gate structure
- semiconductor structure
- semi-ROX structure
- series-gated structure
- shallow chip structure
- shield structure
- short-channel device structure
- short-channel structure
- SIC structure
- silicide-on-polysilicon structure
- silicon-in-sapphire structure
- silicon-on- insulator structure
- silicon- insulator structure
- silicon-on-sapphire structure
- silicon-on-spinel structure
- silicon-over oxide-semiconductor structure
- single-crystal structure
- slow-wave structure
- sphalerite-type structure
- submicrometer structure
- superlattice structure
- surface periodical structure
- test structure
- tiered structure
- totally ordered structure
- trench structure
- trench-gate structure
- trench isolation structure
- triple-diffusion structure
- triple-poly structure
- twin-well structure
- ultra-small structure
- unipolar structure
- van der Pauw structure
- vertical injector structure
- vertically integrated structure
- V-groove structure
- wafer асceptance test structure
- wiring layer structure
- zinc blende structureEnglish-Ukrainian dictionary of microelectronics > structure
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14 approach
метод; підхід (див. також method, mode, technique) - bipolar approach
- bottom-up approach
- Bristle Blocks approach
- building-block approach
- cassette-to-cassette approach
- cellular approach
- cermet approach
- chip-and-wire approach
- circuit motivated approach
- custom approach
- customized approach
- divide and conquer» approach
- edge-based approach
- epic approach
- figure-based approach
- fixed-interconnection pattern approach
- flat approach
- flip-chip approach
- gate-array approach
- hierarchical approach
- hierarchical nesting approach
- hundred per cent yield approach
- hybrid approach
- incremental approach
- in-line approach
- iterative-cell approach
- Macrocell approach
- master MOS approach
- master-slice approach
- mesa-epitaxial fabrication approach
- modular approach
- monolithic approach
- path-oriented approach
- planar processing approach
- planar approach
- polycell layout approach
- polycell approach
- sea gates approach
- selective field-oxide approach
- shaped-beam approach
- SOS approach
- standard cell-basedapproach
- standard cellapproach
- structured approach
- top-down approach
- twin-tub approach
- two-polysilicon approach
- waveform approach -
15 logic
1) логіка 2) логічні схеми, логіка; логічна схема - alternating logic
- array logic
- AS logic
- base-coupled logic
- basic transistor-transistor logic
- bipolar logic
- bubble logic
- buried injector logic
- buried-load logic
- capacitor-coupled FET logic
- charge buffered logic
- charge-coupled device logic
- complementary constant-current logic
- complementary-transistor logic
- control logic
- controlled-saturation logic
- cryogenic logic
- current-hogging logic
- current-injection logic
- current-mirror logic
- current-mode logic
- current-sinking logic
- current-steering logic
- current-switch logic
- dense logic
- digital logic
- diode logic
- diode-transistor logic
- diode-Zener-transistor logic
- direct-coupled logic
- emitter-coupled logic
- emitter-follower logic
- emitter-function logic
- excitation logic
- field-programmable array logic
- fixed logic
- folded-collector integrated injection logic
- four-phase logic
- functional logic
- fuse-programmable array logic
- gate-level logic
- glue logic
- gold transistor logic
- hard-wired logic
- high-density logic
- high-level logic
- high-noise-immunity logic
- high-реrformance logic
- high-speed logic
- high-threshold logic
- hybrid diode-transistor logic
- injection static induction transistor logic
- injection static induction logic
- integrated-circuitlogic
- integratedlogic
- integrated injection logic
- integrated Schottky logic
- interface logic
- ion-implanted integrated injection logic
- isoplanar integrated injection logic
- Josephson cryogenic logic
- Josephson-junction logic
- Josephson tunnel logic
- low-energy logic
- low-level logic
- low-speed logic
- LSI logic
- majority logic
- merged transistor logic
- microwatt logic
- microwave logic
- modified diode-transistor logic
- modified variable-threshold logic
- multilevel logic
- multivalued logic
- nanosecond logic
- negative logic
- nonisolated integrated injection logic
- nonsaturated logic
- nonthreshold logic
- on-chip logic
- oxide-isolated integrated injection logic
- polysilicon integrated injection logic
- positive logic
- programmable logic
- programmable macro logic
- quin-value logic
- random logic
- register transfer logic
- regular logic
- resistor-capacitor transistor logic
- resistor-coupled transistor logic
- resistor-transistor logic
- saturated logic
- Schottky-base integrated injection logic
- Schottlcy-coupled transistor logic
- Schottlcy-coupled logic
- Schottky integrated injection logic
- Schottky-transistor logic
- Schottky transistor-transistor logic
- self-refreshing logic
- sequential logic
- small-scale integration logic
- solid-state logic
- substrate-fed logic
- superconducting logic
- symmetrically emitter-coupled logic
- threshold logic
- tightly-packed logic
- transistor-coupled logic
- transistor-resistor logic
- transistor-transistor logic
- ultra high-speed logic
- user-programmable logic
- variable-threshold logic
- vertical injection logic
- very high-speed logic
- very large-scale integration logic
- V-groove isolated injection logic
- wired logic
- wired AND logic
- wired OR logic -
16 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
17 strip
1) смужка; доріжка; стрічка 2) видаляти [знімати] фоторезист (див. т-ж stripe) - conductor strip
- connector strip
- diffused strip
- gate strip
- lead-frame strip
- polysilicon strip
- semiconductor material strip
- semiconductor strip -
18 TFT (thin-film transistor)
тонкоплівковий транзистор - self-aligned silicon gate TFTEnglish-Ukrainian dictionary of microelectronics > TFT (thin-film transistor)
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19 TFT (thin-film transistor)
тонкоплівковий транзистор - self-aligned silicon gate TFTEnglish-Ukrainian dictionary of microelectronics > TFT (thin-film transistor)
См. также в других словарях:
polysilicon-gate charge-coupled device — krūvio sąsajos įtaisas su polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с… … Radioelektronikos terminų žodynas
polysilicon-gate MOS process — MOP darinių su polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate MOS process vok. Polysiliziumgate MOS Technologie, f rus. технология МОП структур с поликристаллическими… … Radioelektronikos terminų žodynas
single-crystal and polysilicon gate — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
double polysilicon gate MOS process — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
self-aligned polysilicon-gate MOS process — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… … Radioelektronikos terminų žodynas
polysilicon-silicide gate — polikristalinio silicio ir silicido užtūra statusas T sritis radioelektronika atitikmenys: angl. polycide gate; polysilicon silicide gate vok. Silizid Polysilizium Gate, n rus. затвор из поликремния и силицида металла, m pranc. grille… … Radioelektronikos terminų žodynas
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
kombiniertes Gate aus ein- und polykristallinem Silizium — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
single-poly gate — monokristalinio ir polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. single crystal and polysilicon gate; single poly gate vok. kombiniertes Gate aus ein und polykristallinem Silizium, n rus. затвор из… … Radioelektronikos terminų žodynas
Doppel-Poly-Si-Gate-MOS-Technik — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… … Radioelektronikos terminų žodynas
ladungsgekoppeltes Poly-Si-Gate-Bauelement — krūvio sąsajos įtaisas su polikristalinio silicio užtūra statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate charge coupled device vok. ladungsgekoppeltes Poly Si Gate Bauelement, n rus. прибор с зарядовой связью с… … Radioelektronikos terminų žodynas
